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| 型号： | MBR1060 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 170K |
| 描述： | DIODE SCHOTTKY 10A 60V TO220-2 |
| 标准包装： | 50 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 平均整流 (Io)： | 10A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 950mV @ 10A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 60V |
| 电容@ Vr, F： | 400pF @ 4V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220AC |
| 包装： | 管件 |
| 其它名称： | MBR1060DI |
MBR1030 – MBR1050
Document number: DSc23009 Rev. 10 - 2
2 of 4
www.diodes.com
June 2013
? Diodes Incorporated
MBR1030 –
MBR1050
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 7)
VRRM
VRWM
VR
30
35
45
50
V
RMS Reverse Voltage
VR(RMS)
21
24.5
31.5
35
V
Average Rectified Output Current
(Note 4) @TC
= +125°C
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Thermal Characteristics
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Typical Thermal Resistance Junction to Case (Note 5)
RθJC
2.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
MBR
1030
MBR
1035
MBR
1045
MBR
1050
Unit
Forward Voltage Drop @ IF
= 10A, T
C
= +25°C
@ I
F
= 10A, T
C
= +125°C
VFM
0.84
0.57
0.95
0.70
V
Peak Reverse Current @TC
= +25°C
at Rated DC Blocking Voltage (Note 7) @TC
= +125°C
IRM
0.1
15
0.1
25
mA
Typical Total Capacitance (Note 5)
CT
400
pF
Notes: 4. Thermal resistance junc
tion to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. RoHS revision 13.2.2003. High temperature solder exemptions applied, see EU Directive Annex Note 7.
7. Short duration pulse test used to minimize self-heating effect.
0
050100150
2
4
6
8
10
I, AVE
R
A
G
E
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
(AV)
T , CASE TEMPERATURE ( C)C
°
Figure 1 Forward Current Derating Curve
0.1
1.0
10
50
0.2 0.4
1.0
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Figure 2 Typical Forward Characteristics
MBR1030 - MBR1045
MBR1050 / MBR1060
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1060 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 10A 2-Pin(2+Tab) TO-220AC Tube |
| MBR1060 | 制造商:Fairchild Semiconductor Corporation 功能描述:SCHOTTKY DIODE |
| MBR1060/45 | 功能描述:肖特基二极管与整流器 10 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1060_Q | 功能描述:肖特基二极管与整流器 13 amp Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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