参数资料
型号: MBR1060
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 348K
描述: DIODE SCHOTTKY 10A 60V TO-220AC
标准包装: 50
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 100µA @ 60V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220AC
包装: 管件
MBR1035 - MBR1060 —
Schottky Rectifiers
? 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MBR1035 - MBR1060 Rev. 1.2.1 1
October 2013
MBR1035 - MBR1060
Schottky Rectifiers
Features
? Low Power Loss, High Efficiency
? High Surge Capacity
? Metal Silicon Junction, Majority Carrier Conduction
? High Current Capacity, Low Forward-Voltage Drop
? Guard Ring for Over-Voltage Protection (OVP)
Applications
? Low-Voltage
? High-Frequency Inverters
? Free Wheeling
? Polarity Protection
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Part Number Marking Package Packing Method
MBR1035 MBR1035
TO-220 2L Rail
MBR1045 MBR1045
MBR1050 MBR1050
MBR1060 MBR1060
Symbol Parameter
Value
Units
MBR1035 MBR1045 MBR1050 MBR1060
VRRM
Maximum Repetitive Reverse Voltage 35 45 50 60 V
IF(AV)
Average Rectified Forward Current 10 A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine Wave
150 A
Tstg
Storage Temperature Range -65 to +175
°C
TJ
Operating Junction Temperature -65 to +150
°C
Description
This Schottky rectifier is optimal for secondary rectifica-
tion and free-wheeling applications for high-efficiency
DC-DC convertor design, which features very low for-
ward voltage drop and low leakage current.
TO-220AC
1
2
PIIN2
PIIN1
Case
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