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参数资料
| 型号： | MBR1080 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 127K |
| 描述： | DIODE SCHOTTKY 10A 80V TO-220AC |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 80V |
| 电流 - 平均整流 (Io)： | 10A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 10A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 80V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220-2 |
| 包装： | 管件 |
    MBR1080G, MBR1090G, MBR10100G, NRVB10100G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBR/NRVB Unit 1080 1090 10100 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 80 90 100 V Average Rectified Forward Current (Rated VR) TC = 133 ?C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133 ?C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ 65 to +175 ?C Storage Temperature Tstg 65 to +175 ?C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction?to?Case RJC 2.0 ?C/W Maximum Thermal Resistance, Junction?to?Ambient RJA 60 ?C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, T C = 125 ?C) (iF = 10 Amps, T C = 25 ?C) (iF = 20 Amps, T C = 125 ?C) (iF = 20 Amps, T C = 25 ?C) vF 0.7 0.8 0.85 0.95 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125 ?C) (Rated dc Voltage, TC = 25 ?C) iR 6.0 0.10 mA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. |
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相关代理商/技术参数 |
参数描述 |
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| MBR1080 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1080_B0_10001#DELETED BY PJT# | 制造商:PanJit Touch Screens 功能描述: |
| MBR1080_T0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1080CT | 功能描述:肖特基二极管与整流器 10A 80V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1080CT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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