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参数资料
| 型号： | MBR1090CT-G |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 85K |
| 代理商： | MBR1090CT-G |
SENSITRON
SEMICONDUCTOR
Technical Data
Green Products
Data Sheet 3427, Rev. A
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR1080/90/100CT-G
MBRB1080/90/100CT-G
MBR1080/90/100CT-1-G
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
80
MBR1080CT-G
MBRB1080CT-G
MBR1080CT-1-G
90
MBR1090CT-G
MBRB1090CT-G
MBR1090CT-1-G
Peak Inverse Voltage
VRWM
-
100
MBR10100CT-G
MBRB10100CT-G
MBR10100CT-1-G
V
5(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC
=100
°C, rectangular wave
form
10(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
120
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 5A, Pulse, TJ = 25 °C
@ 10 A, Pulse, TJ = 25
°C
0.85
0.95
V
VF2
@ 5 A, Pulse, TJ = 125
°C
@ 10 A, Pulse, TJ = 125 °C
0.75
0.85
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25
°C
1.00
mA
IR2
@VR = rated VR
TJ = 125 °C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
300
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
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