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参数资料
| 型号： | MBR10H100/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 85K |
| 代理商： | MBR10H100/45 |
MBR10H100, MBRF10H100 & MBRB10H100
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88667
2
03-Oct-02
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR10H90
MBR10H100
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
250
A
on rated load (JEDEC Method)
Peak repetitive reverse current at tp = 2
s, 1KHZ
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals to
4500(1)
heatsink with t = 1 second, RH
≤ 30%
VISOL
3500(2)
V
1500(3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
IF = 10A,
TC = 25°C
0.77
forward voltage at(4):IF = 10A,
TC = 125°C
0.64
IF = 20A,
TC = 25°C
VF
0.88
V
IF = 20A,
TC = 125°C
0.73
Maximum reverse current
TJ = 25°C
4.5
A
at working peak reverse voltage(4)
TJ = 125°C
IR
6.0
mA
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance
R
θJC
2.7
5.8
2.7
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR10H90 - MBR10H100
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF10H90 - MBRF10H100
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB10H90 - MBRB10H100
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB2545CT/31 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2090CT | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H90CTG/31 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MMBZ5252B/E9 | 24 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| MMBZ5263B/E8 | 56 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10H100CT | 功能描述:肖特基二极管与整流器 10 Amp 100 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10H100CT/45 | 功能描述:肖特基二极管与整流器 100 Volt 10A Dual 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR10H100CT_10 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0 AMPS. Schottky Barrier Rectifiers |
| MBR10H100CT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS. Schottky Barrier Rectifiers |
| MBR10H100CT-E3/45 | 功能描述:肖特基二极管与整流器 100 Volt 10A Dual 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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