参数资料
型号: MBR10H45-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: PLASTIC PACKAGE-2
文件页数: 2/3页
文件大小: 72K
代理商: MBR10H45-E3
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88780
2
03-Mar-03
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR10H35 MBR10H45 MBR10H50 MBR10H60
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (See fig.1)
IF(AV)
10
A
Peak repetitive forward current at TC = 150 °C
(20 KHz sq. wave)
IFRM
20
A
Non-repetitive avalanche energy
at 25
°C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half sine-wave
IFSM
150
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse current
at tp = 2.0
s, 1 KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20
s waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage
VC
25
kV
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
–65 to +175
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500(1)
to heatsink with t = 1.0 second, RH
≤ 30%
VISOL
3500(2)
V
1500(3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR10H35, MBR10H45 MBR10H50, MBR10H60
Unit
Typ
Max
Typ
Max
Maximum instantaneous
at IF = 10 A
TJ = 25 °C
0.63
0.71
forward voltage(4)
at IF = 10 A
TJ = 125 °C
VF
0.49
0.55
0.57
0.61
V
at IF = 20 A
TJ = 25 °C
0.75
0.85
at IF = 20 A
TJ =125 °C
0.62
0.68
0.71
Maximum instantaneous reverse current
TJ = 25 °C
100
100
A
at rated DC blocking voltage(4)
TJ =125 °C
IR
4.0
12
2.0
12
mA
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Maximum thermal resistance
R
θJC
2.0
4.0
2.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR10H35 – MBR10H60
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF10H35 – MBRF10H60
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB10H35 – MBRB10H60
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
相关PDF资料
PDF描述
MBR15H60CT-E3 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3050PT-E3 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR30H90CT/45-E3 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
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相关代理商/技术参数
参数描述
MBR10H45-E3/45 功能描述:肖特基二极管与整流器 45 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H45HE3/45 功能描述:肖特基二极管与整流器 45 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H50 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers
MBR10H50-E3/45 功能描述:肖特基二极管与整流器 50 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR10H60 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers