参数资料
型号: MBR1100TRPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 4/5页
文件大小: 31K
代理商: MBR1100TRPBF
MBR1100
Bulletin PD-20587 rev. B 03/03
4
www.irf.com
Average Forward Current - I
F(AV)
(A)
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Max. Non-Repetitive Surge Current
Allowable
Case
Temperature
(°C)
Non-Repetitive
Surge
Current
-
I
FSM
(A)
Fig. 5- Forward Power Loss
Characteristics
Average
Power
Loss
(Watts)
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV) /
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Fig. 4 - Max. Allowable Case Temperature
Vs. Average Forward Current
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
Average Forward Current - I
F(AV)
(A)
0
20
40
60
80
100
120
140
160
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
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