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参数资料
| 型号： | MBR120100 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 整流器 |
| 英文描述： | 120 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-1 |
| 文件页数： | 1/2页 |
| 文件大小： | 112K |
| 代理商： | MBR120100 |
39.62
19.69
Maximum
Sq.
Dia.
19.18
30.28
4.06
14.73
4.06
15.88
38.61
18.42
Minimum
Millimeter
3.96
13.34
3.86
18.92
30.02
15.37
Dia.
3.30
12.83
3.05
12.57
1.52
.725
.745
1.182
.156
.525
.152
.605
B
A
D
E
G
J
H
F
C
Dim. Inches
Minimum
.120
.495
K
L
1.56
.130
.160
.580
.160
1.192
.625
.505
1/4-20 UNC-2B
.755
.775
Maximum
Notes
Base is anode
Rev. Polarity
Base is cathode
Std. Polarity
D
C
B
F
K
L
E
J
H
A
G
ROHS Compliant
Reverse Energy Tested
175°C Junction Temperature
Guard Ring Protection
120 Amperes/80 to 100 Volts
Schottky Barrier Rectifier
MBR120100
123NQ100
MBR12080
*Add Suffix R for Reverse Polarity
123NQ080
Part Number
Industry
80V
90V
100V
Repetitive Peak
Reverse Voltage
HS12390*
HS12380*
HS123100*
Microsemi
Reverse Voltage
Working Peak
80V
90V
100V
Catalog Number
*Pulse test: Pulse width 300sec, Duty cycle 2%
R
T
I
V
I
T
V
8.3ms, half sine, J = 175°C
f = 1 KHZ, 25°C, 1sec square wave
RRM, J = 125°C*
RRM, J = 25°C
R = 5.0V, C = 25°C
FM = 120A: J = 25°C*
FM = 120A: J = 125°C*
C = 112°C, Square wave,
0JC = 0.40°C/W
I
VFM
I
FM
V
I
RM
R(OV)
F(AV)
FSM
CJ
RM
I
Typical junction capacitance
Average forward current
Maximum surge current
Maximum repetitive reverse current
Max peak forward voltage
Max peak reverse current
3000 pF
Electrical Characteristics
2000 Amps
2 Amps
75 mA
120 Amps
0.91 Volts
.76 Volts
3.0 mA
-55°C to 175°C
0.12°C/W
0.40°C/W
Case to sink
Junction to case
-55°C to 175°C
20-25 inch pounds
1.1 ounces (32 grams) typical
35-40 inch pounds
TJ
R
TSTG
OCS
OJC
Weight
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Mounting Base Torque
Thermal and Mechanical Characteristics
120 Amp Schottky Rectifier
HS12380-HS123100
January, 2011 - Rev. 6
www.microsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR120100C | 制造商:NAINA 制造商全称:Naina Semiconductor ltd. 功能描述:Silicon Schottky Diode, 120A |
| MBR120100CT | 功能描述:肖特基二极管与整流器 SI PWR SCHOTTKY 2TWR 20-100V 120A100P/70R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR120100CTR | 功能描述:肖特基二极管与整流器 SI PWR SCHOTTKY 2TWR 20-100V 120A100P/70R RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR120100R | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR120150WT | 功能描述:DIODE ARRAY SCHOTTKY 150V TO247 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）（每二极管）:60A 不同 If 时的电压 - 正向（Vf）:950mV @ 60A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:2mA @ 150V 安装类型:通孔 封装/外壳:TO-247-3 供应商器件封装:TO-247AD 标准包装:30 |
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