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参数资料
| 型号： | MBR130T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS |
| 中文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC, CASE 425-04, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 40K |
| 代理商： | MBR130T1 |
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 1
1
Publication Order Number:
MBR130T1/D
MBR130T1, MBR130T3
Surface Mount
Schottky Power Rectifier
Plastic SOD–123 Package
. . . using the Schottky Barrier principle with a large area
metal–to–silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. These state–of–the–art
devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
125
°
C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8
″
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C;
ESD Ratings:
Human Body Model, 3
Mechanical Characteristics
Reel Options: MBR130T1 = 3,000 per 7
″
reel/8 mm tape
Reel Options:
MBR130T3 = 10,000 per 13
″
reel/8 mm tape
Device Marking: S3
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
V
Average Rectified Forward Current
(Rated V
R
) T
L
= 65
°
C
I
F(AV)
1.0
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions, Halfwave, Single
Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range
T
stg
–65 to +125
°
C
Operating Junction Temperature
T
J
–65 to +125
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
1000
V/ s
Device
Package
Shipping
ORDERING INFORMATION
MBR130T1
SOD–123
http://onsemi.com
SOD–123
CASE 425
STYLE 1
3000/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
30 VOLTS
MBR130T3
SOD–123
10,000/Tape & Reel
DEVICE MARKING
S3
S3 = Device Code
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR130T1G | 功能描述:肖特基二极管与整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR130T1G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBR130T3 | 功能描述:肖特基二极管与整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR130T3G | 功能描述:肖特基二极管与整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR130T3G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER |
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