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参数资料
| 型号： | MBR15H60CT/45-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 86K |
| 代理商： | MBR15H60CT/45-E3 |
MBR15HxxCT, MBRF15HxxCT & MBRB15HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88782
www.vishay.com
4-Feb-03
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
1
10
100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
Number of Cycles at 60 HZ
Reverse Voltage (V)
P
eak
F
orw
ard
Surge
Current
(A)
0
5
10
15
20
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous
F
orw
ard
Current
(A)
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
Fig. 4 – Typical Reverse
Characteristics Per Leg
Instantaneous
Re
v
erse
Leakage
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
ranseint
Ther
mal
Impedance
(
°C/W)
pF
-
J
unction
Capacitance
0.01
0.1
10
1
100
10
1000
1
0.1
10
100
1000
10
1
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
TJ = 150
°C
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = 125
°C
TJ = 25
°C
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBRF
MBR, MBRB
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| MBRB15H60CT/81-E3 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB15H50CT/31 | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR160 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
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| MBR15H60CT-E3/45 | 功能描述:肖特基二极管与整流器 60 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR15H60CTHE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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| MBR160_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR160G | 功能描述:肖特基二极管与整流器 1A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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