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参数资料
| 型号： | MBR160RL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE |
| 文件页数： | 3/4页 |
| 文件大小： | 95K |
| 代理商： | MBR160RL |
MBR150 MBR160
3
Rectifier Device Data
Figure 5. Steady–State Thermal Resistance
Figure 6. Typical Capacitance
3/4
0
L, LEAD LENGTH (INCHES)
90
80
60
70
50
VR, REVERSE VOLTAGE (VOLTS)
50
80
0
60
40
30
20
R
JL
,THERMAL
RESIST
ANCE,
40
30
20
3/8
1/8
1/4
1/2
5/8
7/8
1.0
60
70
10
20
30
40
50
70
80
10
100
200
C,
CAP
ACIT
ANCE
(pF)
q JUNCTION–T
O–LEAD
(
C/W)
°
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
100
90
TJ = 25°C
f = 1 MHz
NOTE 3 — MOUNTING DATA:
Data shown for thermal resistance junction–to–ambient
(R
θJA) for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the tie
point temperature cannot be measured.
Typical Values for R
θJA in Still Air
Mounting
Lead Length, L (in)
R
θJA
g
Method
1/8
1/4
1/2
3/4
R
θJA
1
52
65
72
85
°C/W
2
67
80
87
100
°C/W
3
—
50
°C/W
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PD
R
θS(A)
R
θL(A)
R
θJ(A)
R
θJ(K)
R
θL(K)
R
θS(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
θS = Thermal Resistance, Heat Sink to Ambient
R
θL = Thermal Resistance, Lead to Heat Sink
R
θJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
Mounting Method 1
P.C. Board with
1–1/2
″ x 1–1/2″
copper surface.
Mounting Method 3
P.C. Board with
1–1/2
″ x 1–1/2″
copper surface.
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
Mounting Method 2
LL
LL
L = 3/8
″
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
θL = 100°C/W/in typically and 120°C/W/in maximum.
R
θJ = 36°C/W typically and 46°C/W maximum.
NOTE 5 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of ma-
jority carrier conduction, it is not subject to junction diode for-
ward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
diode in parallel with a variable capacitance. (See Figure 6.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2 MHz, e.g., the ratio of dc power to RMS power in
the load is 0.28 at this frequency, whereas perfect rectifica-
tion would yield 0.406 for sine wave inputs. However, in con-
trast to ordinary junction diodes, the loss in waveform effi-
ciency is not indicative of power loss: it is simply a result of
reverse current flow through the diode capacitance, which
lowers the dc output voltage.
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