参数资料
型号: MBR160TR
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 2/5页
文件大小: 32K
代理商: MBR160TR
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
2
www.irf.com
VR
Max. DC Reverse Voltage (V)
50
60
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
V
FM
Max. Forward Voltage Drop
0.75
V
@ 1A
* See Fig. 1
(1)
0.9
V
@ 2A
T
J
= 25 °C
1.0
V
@ 3A
0.65
V
@ 1A
0.75
V
@ 2A
T
J
= 125 °C
0.82
V
@ 3A
I
RM
Max. Reverse Leakage Current
0.5
mA
T J = 25 °C
* See Fig. 2
(1)
5
mA
T J = 100°C
V
R
= rated V
R
10
mA
T J = 125 °C
CT
Typical Junction Capacitance
55
pF
V R = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
Electrical Specifications
T
J
Max. Junction Temperature Range(*)
- 40 to 150
°C
Tstg
Max. Storage Temperature Range
- 40 to 150
°C
R
thJL
Max. Thermal Resistance Junction
80
°C/W DC operation (*See Fig. 4)
to Lead
(**)
wt
Approximate Weight
0.33(0.012) g (oz.)
Case Style
DO-204AL(DO-41)
Thermal-Mechanical Specifications
Part number
MBR150
MBR160
Parameters
Value
Units Conditions
Parameters
Value
Units Conditions
(1) Pulse Width < 300s, Duty Cycle <2%
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from package
I
F(AV)
Max. Average Forward Current
1.0
A
50% duty cycle @ T
C
= 75°C, rectangular wave form
* See Fig. 4
I
FSM
Max. Peak One Cycle Non-Repetitive
150
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
25
10ms Sine or 6ms Rect. pulse
EAS
Non-Repetitive Avalanche Energy
2.0
mJ
TJ = 25 °C, IAS = 1 Amps, L = 4 mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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