参数资料
型号: MBR1635G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 62K
描述: DIODE SCHOTTKY 35V 16A TO220AC
产品目录绘图: Rectifier TO-220AC, TO-220B
标准包装: 50
系列: SWITCHMODE™
二极管类型: 肖特基
电压 - (Vr)(最大): 35V
电流 - 平均整流 (Io): 16A
电压 - 在 If 时为正向 (Vf)(最大): 630mV @ 16A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 35V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220-2
包装: 管件
产品目录页面: 1568 (CN2011-ZH PDF)
其它名称: MBR1635GOS
?
Semiconductor Components Industries, LLC, 2014
April, 2014 ? Rev. 12
1
Publication Order Number:
MBR1635/D
MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state?of?the?art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
?
Guard?ring for Stress Protection
?
Low Forward Voltage
?
175°C Operating Junction Temperature
?
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These Devices are Pb?Free and are RoHS Compliant
Mechanical Characteristics:
?
Case: Epoxy, Molded
?
Weight: 1.9 Grams for TO?220
1.7 Grams for D2PAK
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1635
MBR1645
MBRB1645
VRRM
VRWM
VR
35
45
45
V
Average Rectified Forward Current Delay
(Rated VR, TC
= 163
°C) Total Device
IF(AV)
16
A
Peak Repetitive Forward Current, Per
Leg
(Rated VR, Square Wave,
20 kHz, TC
= 157
°C) Total Device
IFRM
32
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current
(2.0 s, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less
than the thermal conductivity from
Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
Device Package Shipping
ORDERING INFORMATION
TO?220AC
CASE 221B
PLASTIC
3
4
1
MBR1635G TO?220
(Pb?Free)
50 Units / Rail
3
1, 4
MARKING
DIAGRAMS
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
B16x5 = Device Code
x = 3 or 4
KA = Diode Polarity
G = Pb?Free Package
AYWWG
B16x5
KA
MBR1645G TO?220
(Pb?Free)
50 Units / Rail
B1645G
AYWW
D2PAK
CASE 418B
STYLE 3
3
4
1
B1645 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
MBRB1645T4G D2PAK
(Pb?Free)
800 Units / Rail
1
3
4
NRVBB1645T4G D2PAK
(Pb?Free)
800 Units / Rail
相关PDF资料
PDF描述
P51-75-S-M-P-4.5V-000-000 SENSOR 75PSI M10-1.0 6G .5-4.5V
REC3-1209SRW/H2/A/SMD CONV DC/DC 3W 9-18VIN 09VOUT
REC3-2415DRWZ/H6/A/SMD/CTRL CONV DC/DC 3W 9-36VIN +/-15VOUT
P51-200-S-L-P-4.5V-000-000 SENSOR 200PSI M10-1.25 6H 4.5V
P51-2000-A-J-I36-20MA-000-000 SENSOR 2000PSI 3/8-24 UNF 4-20MA
相关代理商/技术参数
参数描述
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