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参数资料
| 型号： | MBR1660 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 263K |
| 代理商： | MBR1660 |
Notes:
1. 2.0s Pulse Width, f=1.0 KHz
2. Pulse Test: 300s Pulse Width, 1% Duty Cycle
3. Thermal Resistance from junction to Case Per Leg with Heatsink Size of 50.8 mm x 76.2 mm x 6.35 mm Al-Plate.
Maximum Recurrent Peak Reverse Voltage (V)
1
2
1
2
Case
Jun - 09
MBR1645 ....... MBR16150
16 Amp. Schottky Barrier Rectifier
Voltage
45 to 150 V
Current
16 A
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
at TC = 125 °C
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
– 65 to + 175 °C
IFSM
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC Method)
16 A
150 A
31
45
– 65 to + 150 °C
MBR
1645
45
42
60
70
100
VF
Max.Instantaneous Forward Voltage
IR
Max. Instantaneous Reverse Current at Tc = 25 °C
Rated DC Blocking Voltage (Note 2)
Tc = 125 °C
Rthj-c
Maximun Typical Thermal Resistance (Note 3)
0.57 V
0.75 V
0.65 V
Tc = 125 °C
Tc = 25 °C
0.63 V
5 mA
0.1 mA
IRRM
Peak Repetitive Reverse Surge Current (Note 1)
MBR
1660
MBR
16100
0.5 A
1.0 A
0.85 V
0.75 V
3.0 °C/W
15 mA
0.5 mA
at IF = 16 A
10 mA
105
150
MBR
16150
MBR
1645
MBR
1660
MBR
16100
MBR
16150
0.95 V
0.92 V
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tim plated, lead free, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Weight: 2.24 grams
Mechanical Data
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260°C/10 seconds, 6.35mm from case
Mounting position: Any
Mounting torque: 5 in. - Ibs. max
Low power loss, high efficiency
(Note 2)
7.5 mA
0.3 mA
TO-220AC
Case Positive
相关PDF资料 |
PDF描述 |
|---|---|
| MBR1660 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1650 | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1640 | 16 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1635 | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR20100CTKPBF | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR1660/45 | 功能描述:肖特基二极管与整流器 60 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1660_Q | 功能描述:肖特基二极管与整流器 19 amp Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1660-E3 | 制造商:Vishay Intertechnologies 功能描述:MBR1660-E3 |
| MBR1660-E3/45 | 功能描述:肖特基二极管与整流器 16 Amp 60Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR1660HE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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