- 您现在的位置：买卖IC网 > PDF目录296482 > MBR20100CTKPBF 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20100CTKPBF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 165K |
| 代理商： | MBR20100CTKPBF |
MBR20100CTKPbF
Bulletin PD-21011 rev. B 05/06
2
www.irf.com
T
J
Max. Junction Temperature Range
-65 to 150
°C
Tstg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC Max. Thermal Resistance
2.0
°C/W DC operation
Junction to Case
(Per Leg)
R
thCS Typical Thermal Resistance
0.50
°C/W Mounting surface, smooth and greased
Case to Heatsink
Only for TO-220
R
thJA Max. Thermal Resistance
50
°C/W DC operation
Junction to Ambient
For D2Pak and TO-262
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Non-lubricated threads
Max.
12 (10)
Device Marking
MBR20100CTK
TO-220 package style
Thermal-Mechanical Specifications
Parameters
Values
Units
Conditions
Kg-cm
(Ibf-in)
V
FM
Max. Forward Voltage Drop
0.80
V
@ 10A
(1)
0.95
V
@ 20A
0.65
V
@ 10A
0.80
V
@ 20A
I
RM
Max. Instantaneus Reverse Current
0.10
mA
TJ = 25 °C
(1)
6
mA
TJ = 125 °C
VF(TO) Threshold Voltage
0.433
V
T
J = TJ max.
rt
Forward Slope Resistance
15.8
m
Ω
CT
Max. Junction Capacitance
400
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ μs (Rated VR)
Electrical Specifications
Parameters
Values
Units
Conditions
Rated DC voltage
T
J =
25 °C
T
J = 125 °C
(1) Pulse Width < 300μs, Duty Cycle <2%
I
F(AV) Max. Average Forward (Per Leg)
10
A
@ T
C = 133° C, (Rated VR)
Current
(Per Device)
20
I
FRM
Peak Repetitive Forward
20
A
Rated VR, square wave, 20kHz
Current
(Per Leg)
TC = 133° C
I
FSM
Non Repetitive Peak
5μs Sine or 3μs
Surge Current
Rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60Hz
I
RRM
Peak Repetitive Reverse
0.5
A
2.0 μsec 1.0 KHz
Surge Current
EAS
Non-Repetitive Avalanche Energy
24
mJ
T
J = 25 °C, IAS = 2 Amps, L = 12 mH
(Per Leg)
Absolute Maximum Ratings
Following any rated load condition
and with rated VRRM applied
A
150
Voltage Ratings
Parameters
MBR20100CTKPbF
Parameters
Values
Units
Conditions
850
VR
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20120FCT-BP | 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20150CT-BP | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2030CTL | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H100CT-M3/4W | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR50080CT | 250 A, 80 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20100CTKPBF_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
| MBR20100CTL | 制造商:World Products 功能描述: |
| MBR20100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 20A TO220AB |
| MBR20100CT-M3/4W | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube 制造商:Vishay Semiconductors 功能描述:20A,100V,TRENCH SKY RECT. 制造商:Vishay Intertechnologies 功能描述:MBR20100CT Series 100 V 2 x 10 A Through Hole Schottky Rectifier - TO-262-3 制造商:Vishay 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube |
| MBR20100CTP | 功能描述:肖特基二极管与整流器 100V 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。