- 您现在的位置：买卖IC网 > PDF目录65807 > MBR20100CTL (LITE-ON ELECTRONICS INC) 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20100CTL |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 70K |
| 代理商： | MBR20100CTL |
MBR20100CTL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
100
mA
TC =110 C
Maximum Forward
Voltage (Note 1)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
MBR20100CTL
100
70
100
V/us
0.75
0.85
0.95
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 100 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 3)
CJ
250
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
SEMICONDUCTOR
LITE-ON
REV. 2, Aug-2007, KTHC28
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20150CT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2030CTL | 15 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2035CTPBF | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2050CT | 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2050FCT-BP | 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 20A TO220AB |
| MBR20100CT-M3/4W | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube 制造商:Vishay Semiconductors 功能描述:20A,100V,TRENCH SKY RECT. 制造商:Vishay Intertechnologies 功能描述:MBR20100CT Series 100 V 2 x 10 A Through Hole Schottky Rectifier - TO-262-3 制造商:Vishay 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube |
| MBR20100CTP | 功能描述:肖特基二极管与整流器 100V 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20100CTPBF | 功能描述:DIODE SCHOTTKY 100V 10A TO220AB RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:TMBS® 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| MBR20100CTPG | 制造商:ON Semiconductor 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Rail |
发布紧急采购，3分钟左右您将得到回复。