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| 型号： | MBR20150CT-1 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | PLASTIC, TO-262, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 117K |
| 代理商： | MBR20150CT-1 |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR20150CT
MBRB20150CT
MBR20150CT-1
Data Sheet 2926, Rev. D
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
150
V
10(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC =154°C,
rectangular wave form
20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
220
A
Non-Repetitive Avalanche
Energy (per leg)
EAS
TJ = 25 °C, IAS = 0.7 A,
L = 10mH
2.45
mJ
Repetitive Avalanche Current
(per leg)
IAR
Current decaying linearly to zero
in 1 sec Frequency limited by
T J max. V A = 1.5 x V R typical
0.7
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg)*
VF1
@ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C
0.83
0.96
V
VF2
@ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125
°C
0.66
0.77
V
Max. Reverse Current (per
leg)*
IR1
@VR = rated VR
TJ = 25 °C
1.00
mA
IR2
@VR = rated VR
TJ = 125 °C
5.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
400
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC
DC operation
1.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20150CTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 150V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 150V TO220AB |
| MBR20150CT-G | 功能描述:肖特基二极管与整流器 150V, 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20150CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 150V 20A TO220AB |
| MBR20150CTP | 功能描述:肖特基二极管与整流器 20A 150 ANON RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20150CTTU | 功能描述:肖特基二极管与整流器 150V/20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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