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参数资料
| 型号： | MBR2035CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 80K |
| 代理商： | MBR2035CT |
MBR2030CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
MBR
2030CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
dv/dt
0.65
0.57
0.84
0.72
IR
@TJ =100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
TC =125 C
V/us
MBR
2035CT
35
24.5
35
MBR
2040CT
40
28
40
MBR
2045CT
45
31.5
45
MBR
2050CT
50
35
50
MBR
2060CT
60
42
60
10000
0.80
0.70
0.95
0.85
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 2)
CJ
300
400
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
TJ =25 C
SEMICONDUCTOR
LITE-ON
REV. 6, Oct-2010, KTHC08
相关PDF资料 |
PDF描述 |
|---|---|
| MBR2060CT | 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2030CT | 20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2050PT | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR2035PT | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR2045PT | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2035CT/45 | 功能描述:肖特基二极管与整流器 20 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2035CT_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
| MBR2035CT_1 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:20.0 AMPS. Schottky Barrier Rectifiers |
| MBR2035CT_10 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:20.0 AMPS. Schottky Barrier Rectifiers |
| MBR2035CT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:20.0 AMPS. Schottky Barrier Rectifiers |
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