- 您现在的位置：买卖IC网 > PDF目录264401 > MBR2045CT/45-E3 (VISHAY SEMICONDUCTORS) 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR2045CT/45-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 47K |
| 代理商： | MBR2045CT/45-E3 |
MBR20xxCT, MBRF20xxCT & MBRB20xxCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88674
www.vishay.com
07-Feb-02
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
I F
–
Instantaneous
F
orw
ard
Current
(A)
50
10
I R
–
Instantaneous
Re
v
erse
Current
(mA)
Typical Reverse Characteristics Per Leg
1.0
0.1
0.01
Forward Current Derating Curve
0
4
8
12
20
0
50
100
150
16
A
v
er
age
F
orw
ard
Current
(A)
P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 HZ
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
60
40
80
140
120
100
160
110
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Case Temperature (
°C)
Typical Instantaneous
Forward Characteristics Per Leg
1.0
10
50
0.01
0.001
0.1
TJ = 125
°C
75
°C
25
°C
Resistive or Inductive Load
T
ransient
Ther
mal
Impedance
(
°C/W)
0.01
110
100
10
100
0.1
1
t – Pulse Duration (sec.)
TJ = 25
°C
MBR2035CT – MBR2045CT
MBR2050CT & MBR2060CT
TJ = 150
°C
MBR2035CT – MBR2045CT
MBR2050CT & MBR2060CT
Typical Junction Capacitance Per Leg
pF
–
J
unction
Capacitance
110
100
1,000
4,000
100
0.1
Reverse Voltage (V)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
Pulse Width = 300
s
1% Duty Cycle
0
20
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Typical Transient
Thermal Impedance Per Leg
Instantaneous Forward Voltage (V)
0
0.2
0.1
1.0 1.1 1.2
0.4
0.3
0.6 0.7 0.8
0.5
0.9
MBR2035CT – MBR2045CT
MBR2050CT & MBR2060CT
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20H100CTG/45-E3 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB1050/45-E3 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB16H60-E3 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MA4P7455-1146T | SILICON, PIN DIODE |
| MSP1PMT4105CE3 | 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2045C-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| MBR2045CTD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODEE TM Power Rectifier |
| MBR2045CT-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER |
| MBR2045CT-E3 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Guardring for overvoltage protection |
| MBR2045CT-E3/45 | 功能描述:肖特基二极管与整流器 20 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。