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| 型号： | MBR2045CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 118K |
| 描述： | DIODE SCHOTTKY 45V 10A TO220AB |
| 产品变化通告： | Product Discontinuation 30/Sept/2011 |
| 产品目录绘图： | TO-220AB, TO-220, TO-220 ISO |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 570mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 45V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 45V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MBR2045CTGOS |
MBR2045CT, MBRF2045CT
http://onsemi.com
2
TO?220AB
Figure 1. Marking Diagrams
AYWW
MBR2045CTG
AKA
TO?220 FULLPAK
AYWW
B2045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
AKA = Diode Polarity
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
45
V
Average Rectified Forward Current
Per Device
Per Diode (TC
= 165
°C)
IF(AV)
20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC
= 163
°C)
IFRM
20
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
See Figure 13
IRRM
1.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR2045CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
(MBRF2045CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
RJC
RJA
2.0
60
4.75
75
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2045CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER |
| MBR2045CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MBR2045CTHE3 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Guardring for overvoltage protection |
| MBR2045CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 45 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2045CTHE45 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Guardring for overvoltage protection |
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