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参数资料
| 型号： | MBR2050CT-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 66K |
| 描述： | DIODE SCHOTTKY 20A 50V TO-220AB |
| 标准包装： | 2,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 950mV @ 20A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 50V |
| 电流 - 平均整流 (Io)（每个二极管）： | 20A |
| 电压 - (Vr)（最大）： | 50V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 盒 |
QW-BB046
Page 1
REV:B
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
V
oltage: 30 to 150 V
Current: 20.0
A
RoHS Device
MBR2030CT-G Thru. MBR20150CT-G
Dimensions
in
inches
and
(millimeter)
TO-220AB
Comchip Technology CO., LTD.
(3.20)
0.126
0.055(1.40)
0.047(1.20)
0.148(3.80)
0.187(4.70)
0.531(13.50)
0.583(14.80)
0.610(15.50)
0.583(14.80)
0.157
(4.0)
0.230(5.80)
0.270(6.90)
0.108
(2.75)
0.153(3.90)
0.146(3.70)
0.347( 9.50)
0.413(10.50)
0.024(0.60)
0.012(0.30)
0.051(1.30)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
MAX
Parameter
Symbol
2030CT
-G
2040CT-G
-G
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
Operating Temperature Range
Storage Temperature Range
30
21
30
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
TJ
TSTG
150
0.10
-55 to +150
-55 to +175
V
V
V
A
A
V
mA
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
150
105
150
20.0
Maximum DC Reverse Current
@
TJ= 25°C
at Rate DC Blocking V
oltage
@
TJ= 125°C
MBR
MBR
MBR
2050CT-G
MBR
2060CT-G
MBR
2080CT-G
20100CT-G
20150CT
MBR
MBR
Peak Forward Voltage
(Note 1)
IF=10A@ TJ= 25°C
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.95
0.85
1.05
0.95
0.10
15.0
10.0
0.10
7.50
0.10
5.00
Typical Junction Capacitance (Note2)
CJ
400
320
pF
Typical Thermal Resistance (Note3)
RθJC
1.50
°C/W
3.50
°C
°C
3. Thermal resistance junction to case.
SMD
Schottky
Barrier
Rectifiers
Features
-Metal of silicon rectifier
, majority carrier conduction.
-
High current capability,
-High surge capacity
.
Mechanical Data
-Guard ring for transient protection.
-Low power loss, high ef
ficiency.
-Epoxy: UL
94-V0 rate flame retardant.
-Mounting position:
Any
-Case:
TO-220AB, molded plastic
-W
eight: 2.24 grams
low VF.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
-Polarity:
As marked on the body.
Comchip
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2050CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 50 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2050F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR2050FCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:20 AMPERES SCHOTTKY BARRIER RECTIFIERS |
| MBR2050FCTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 50V, VF=0.75V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 50V ITO220AB |
| MBR2050H | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
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