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参数资料
| 型号： | MBR2050CT-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 500K |
| 代理商： | MBR2050CT-HE3/45 |
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Document Number: 88674
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1.0
0.1
0.01
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
0
0.2
0.1
1.0 1.1 1.2
0.4
0.3
0.6 0.7 0.8
0.5
0.9
T
J = 150 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1
10
100
0.01
0.001
0.1
20
0
100
40
60
80
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR2060CT-HE3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB2035CT-E3/45 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2035CT-E3/81 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2035CT-HE3/45 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2045CT-E3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2050F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR2050FCT | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:20 AMPERES SCHOTTKY BARRIER RECTIFIERS |
| MBR2050FCTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 50V, VF=0.75V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 50V ITO220AB |
| MBR2050H | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR2050PT | 功能描述:肖特基二极管与整流器 20A,50V,DUAL SCHOTTKY Rect RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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