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| 型号： | MBR2060CT-1 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | PLASTIC,TO-262, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 231K |
| 代理商： | MBR2060CT-1 |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Data Sheet 2803, Rev. B
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
50
MBR2050CT
MBRB2050CT-1
MBR2050CT-1
Peak Inverse Voltage
VRWM
-
60
MBR2060CT
MBRB2060CT-1
MBR2060CT-1
V
Max. Average Forward
IF(AV)
50% duty cycle @TC =135°C,
rectangular wave form
20
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg)*
VF1
@ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C
0.80
0.95
V
VF2
@ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125 °C
0.70
0.85
V
Max. Reverse Current (per
leg)*
IR1
@VR = rated VR
TJ = 25 °C
0.15
mA
IR2
@VR = rated VR
TJ = 125 °C
150.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
400
pF
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +175
°C
Max. Storage Temperature
Tstg
-
-55 to +175
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC
DC operation
1.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262(Suffix”-1” for TO-262,”MBRB x” for D2PAK)
Data Sheet 2921, Rev. –
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB2545CT | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR2550CT | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB3035CT-1 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRB3045CT-1 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRB3040CT | 30 A, 40 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2060CT-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR2060CT-E3 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 20A 3-Pin(3+Tab) TO-220AB 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBR2060CT-E3/45 | 功能描述:肖特基二极管与整流器 20 Amp 60 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2060CTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 60V, VF=0.75V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 60V TO220AB |
| MBR2060CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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