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参数资料
| 型号： | MBR2060CT-E1 |
| 厂商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN |
| 文件页数： | 6/11页 |
| 文件大小： | 905K |
| 代理商： | MBR2060CT-E1 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2060C
4
BCD Semiconductor Manufacturing Limited
May. 2010 Rev. 1. 1
Data Sheet
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC=136oC
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=131oC
IFRM
20
A
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
IFSM
150
A
Operating Junction Temperature (Note 2)
TJ
150
oC
Storage Temperature Range
TSTG
-50 to 150
oC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/
s
ESD (Machine Model=C)
>400
V
ESD (Human Body Model=3B)
>8000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Condition
Value
Unit
Maximum Thermal Resistance
θJC
Junction to Case
TO-220-3/
TO-220-3(2)
2.5
oC/W
TO-220F-3
4.5
θJA
Junction to Ambient
TO-220-3/
TO-220-3(2)
60
TO-220F-3
60
Thermal Characteristics
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相关代理商/技术参数 |
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| MBR2060CT-E3 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 60V 20A 3-Pin(3+Tab) TO-220AB 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBR2060CT-E3/45 | 功能描述:肖特基二极管与整流器 20 Amp 60 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2060CTE3/TU | 制造商:Microsemi Corporation 功能描述:20A, 60V, VF=0.75V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 60V TO220AB |
| MBR2060CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR2060CTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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