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参数资料
| 型号： | MBR2080CT-F |
| 厂商： | DIODES INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 60K |
| 代理商： | MBR2080CT-F |
DS30019 Rev. 5 - 2
1 of 2
MBR2070CT-MBR20100CT
www.diodes.com
Diodes Incorporated
MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
G
12 3
J
HH
Pin 1
Pin 3
Pin 2
Case
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free/RoHS Compliant (Note 3)
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
Marking: Type Number
Weight: 2.24 grams (approx)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
2070CT
MBR
2080CT
MBR
2090CT
MBR
20100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current
(Note 1)
@ TC = 125
°C
IO
20
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@ IF = 10A, Tj = 125
°C
@ IF = 10A, Tj = 25
°C
@ IF = 20A, Tj = 125
°C
@ IF = 20A, Tj = 25
°C
VFM
0.75
0.85
0.95
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 125
°C
IRM
0.15
150
mA
Typical Junction Capacitance (Note 2)
Cj
1000
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
2.0
°C/W
Voltage Rate of Change
dV/dt
10000
V/
ms
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
-65 to +175
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
TO-220AB
Dim
Min
Max
A
14.48
15.75
B
10.00
10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70
14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2080CTG | 功能描述:肖特基二极管与整流器 20A 80V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2080CT-G | 功能描述:肖特基二极管与整流器 80V, 20A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2080CTG-1 | 功能描述:肖特基二极管与整流器 20 Amp 80 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2080CTG-1P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
| MBR2080CTG-1PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
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