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参数资料
| 型号： | MBR2090CT |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 134K |
| 代理商： | MBR2090CT |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR2080/90/100CT
MBRB2080/90/100CT
MBR2080/90/100CT-1
Technical Data
Data Sheet 2914 Rev. E
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
80
MBR2080CT
MBRB2080CT
MBR2080CT-1
90
MBR2090CT
MBRB2090CT
MBR2090CT-1
Peak Inverse Voltage
VRWM
-
100
MBR20100CT
MBRB20100CT
MBR20100CT-1
V
10(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC =133℃,
rectangular wave form
20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Peak Repetitive Reverse
Surge Current (per leg)
IRRM
2.0
s,1.0KHz
0.5
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg)*
VF1
@ 10A, Pulse, TJ = 25 ℃
@ 20 A, Pulse, TJ = 25 ℃
0.85
0.95
V
VF2
@ 10 A, Pulse, TJ = 125 ℃
@ 20 A, Pulse, TJ = 125 ℃
0.75
0.85
V
Max. Reverse Current
(per leg)*
IR1
@VR = rated VR
TJ = 25 ℃
1.00
mA
IR2
@VR = rated VR
TJ = 125 ℃
6.0
mA
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
℃
Max. Storage Temperature
Tstg
-
-55 to +150
℃
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
℃/W
Approximate Weight
wt
-
1.9
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相关PDF资料 |
PDF描述 |
|---|---|
| MBR2090FCT | 20 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20150FCT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20H100CT-1/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20H100CT/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H90CT/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2090CT/4W | 功能描述:肖特基二极管与整流器 20 Amp 90 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2090CT_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR2090CT_12 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR2090CT-1 | 功能描述:肖特基二极管与整流器 20 Amp 90 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2090CT-1-G | 制造商:SENSITRON 制造商全称:Sensitron 功能描述:SCHOTTKY RECTIFIER |
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