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参数资料
| 型号： | MBR20H100CTG/45-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 127K |
| 代理商： | MBR20H100CTG/45-E3 |
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Rev. Voltage 90 to 100V
Forward Current 20A
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad
Layout
TO-263AB
Dimensions in inches
and (millimeters)
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
1
3
PIN
2
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
DIA.
0.676 (17.2)
0.646 (16.4)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
PIN 2
PIN 1
PIN 3
ITO-220AB (MBRF20H90CTG, MBRF20H100CTG)
TO-220AB (MBR20H90CTG, MBR20H100CTG)
TO-263AB (MBRB20H90CTG, MBRB20H100CTG)
12
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
CASE
1.148 (29.16)
1.118 (28.40)
PIN 2
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
PIN 1
PIN 3
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
MBR(F,B)20H100CTG Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88856
www.vishay.com
13-Sep-02
1
New Product
Dual High-Voltage Schottky Rectifiers
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H100CTG-E3/45 | 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H100CTGHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H100CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MBR20H100CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H100FCT | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
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