参数资料
型号: MBR20H100CTG-E3/45
厂商: Vishay General Semiconductor
文件页数: 1/4页
文件大小: 400K
描述: DIODE SCHOTT 20A 100V DUAL TO220
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 10A
电流 - 在 Vr 时反向漏电: 3.5µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 100V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
? Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.70 V
IR
3.5 μA
TJ max. 175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20H90CTG
1
MBR20H100CTG
32
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR20H90CTG MBR20H100CTG UNIT
Maximum repetitive peak reverse voltage VRRM
90 100 V
Working peak reverse voltage VRWM
90 100 V
Maximum DC blocking voltage VDC
90 100 V
Maximum average forward rectified current at TC
= 155 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150 A
Peak repetitive reverse current per diode at tp
= 2 μs, 1 kHz I
RRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175 °C
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