参数资料
型号: MBR20H150CTE3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: LEAD FREE, PLASTIC PACKAGE-3
文件页数: 3/5页
文件大小: 0K
代理商: MBR20H150CTE3
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Document Number 88864
29-Aug-05
Vishay Semiconductors
www.vishay.com
3
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
0
5
10
15
20
25
30
25
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
Current
(A)
Case Temperature ( °C)
MBRF
MBR, MBRB
0
20
40
60
80
100
120
140
160
180
200
220
240
200
1
10
100
P
eak
F
o
rw
ard
Surge
Current
(A)
Number of Cycles at 60 HZ
TJ =TJmax
8.3 ms single half-wave
0.1
0.3
0.2
0.4
0.6
0.8
1.0
0.5
0.7
0.9
1.1
1.2
100
10
0.1
1
Instantaneous Forward Voltage (V)
I F
--
Instantaneous
Forward
Current
(A)
TJ = 175 °C
TJ = 125 °C
TJ =75 °C
TJ =25 °C
Figure 4. Typical Reverse Characteristics Per Leg
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance Per Leg
0.1
0.01
1
10
100
1,000
10,000
I R
--
Instantaneous
Reverse
Current
A)
10
20
30
50
70
100
40
60
80
90
Percent of Rated Peak Reverse Voltage (%)
TJ = 175 °C
TJ = 125 °C
TJ =75 °C
TJ =25 °C
Junction
Capacitance
(pF)
1
10
100
1000
10000
0.1
10
Reverse Voltage (V)
0.01
1
100
10
100
0.1
1
t -- Pulse Duration (sec.)
Transient
Thermal
Impedance
(
°C/W)
MBRF
MBR, MBRB
相关PDF资料
PDF描述
MBRF20H150CTE3 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
SB20H150CT-1-E3 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA
SB20H150CT-1 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA
SB20H150CT-1E3 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA
MBR2100CT-003PBF 10 A, 100 V, SILICON, RECTIFIER DIODE
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