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参数资料
| 型号： | MBR20H35CT-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 138K |
| 代理商： | MBR20H35CT-HE3/45 |
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
Document Number: 88787
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
5
10
15
20
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
10
1
100
25
50
75
100
125
150
175
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1
10
100
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
0.1
1
10
100
1000
MBR20H35CT - MBR20H45CT
MBR20H50CT - MBR20H60CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20H60CT-E3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB1045-HE3/81 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB10H45-HE3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB16H50-HE3/81 | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H100CT-HE3/81 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR20H45CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20H45CT/45 | 功能描述:肖特基二极管与整流器 20 Amp 45 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H45CT-E3/45 | 功能描述:肖特基二极管与整流器 20 Amp 45 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H45CTHE3/45 | 功能描述:肖特基二极管与整流器 20 Amp 45 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR20H50CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
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