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参数资料
型号： MBR20H45CT-E3/45
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封装： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数： 1/5页
文件大小： 138K
代理商： MBR20H45CT-E3/45
New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
Document Number: 88787
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
100 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20HxxCT
ITO-220AB
MBRB20HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF20HxxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H35CT
MBR20H45CT
MBR20H50CT
MBR20H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified
current (Fig. 1)
total device
per diode
IF(AV)
20
10
A
Non-repetitive avalanche energy per diode at
25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at
tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 s waveform)
ERSM
20
10
mJ
相关PDF资料
PDF描述
MBR2560CT-HE3/45 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB10H100CT-E3/81 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB20H100CT-HE3/45 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF10H45-HE3/45 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF20H100CTG-HE3/45 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
相关代理商/技术参数
参数描述
MBR20H45CTHE3/45 功能描述:肖特基二极管与整流器 20 Amp 45 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR20H50CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier
MBR20H60CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier
MBR20H60CT/45 功能描述:肖特基二极管与整流器 20 Amp 60 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR20H60CT-E3/45 功能描述:肖特基二极管与整流器 20 Amp 60 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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