- 您现在的位置：买卖IC网 > PDF目录53720 > MBR20V100CTG (ON SEMICONDUCTOR) 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR20V100CTG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 48K |
| 代理商： | MBR20V100CTG |
MBR20V100CT
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 160°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
TC = 160°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
210
A
Peak Repetitive Reverse Surge Current (2.0
ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
ESD Ratings: Machine Model = C
Human Body Model = 3B
>400
>8000
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from junction toambient: dPD/dTJ < 1/RqJA
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
TJ = 255C
TJ = 1255C
Unit
Maximum Instantaneous Forward Voltage (Note 2)
IF = 10 A
IF = 20 A
vF
0.74
0.85
0.62
0.70
V
Maximum Instantaneous Reverse Current (Note 2)
VR = 100 V
IR
0.0045
6.0
mA
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20V100CT | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2535-BP | 25 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR2545-BP | 25 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR2535 | 25 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR2540-BP | 25 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2200_R2_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR230LSFT1G | 功能描述:肖特基二极管与整流器 2A 30V SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR230LSFT1G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 2A 30V SOD-123FL |
| MBR25100CT | 功能描述:肖特基二极管与整流器 30 Amp 100 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR25150CT | 功能描述:肖特基二极管与整流器 30 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。