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参数资料
| 型号： | MBR2560CT45-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件页数： | 2/3页 |
| 文件大小： | 51K |
| 代理商： | MBR2560CT45-E3 |
MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88675
2
17-May-02
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current Total device
30
at TC = 130°C
Per leg
IF(AV)
15
A
Peak repetitive forward current per leg at TC = 130°C
IFRM
30
A
(rated VR, square wave, 20 KHZ)
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
150
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20s waveform)
ERSM
25
mJ
Electrostatic discharge capacitor voltage
VC
25
kV
Human body model: c = 100pF, R = 1.5k
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
–65 to +150
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500(1)
to heatsink with t = 1.0 second, RH
≤ 30%
VISOL
3500(2)
V
1500(3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Unit
Maximum instantaneous
at IF = 15A, TC = 25°C
–
0.75
forward voltage per leg(4)
at IF = 15A, TC = 125°C
VF
–
0.65
V
at IF = 30A, TC = 25°C
0.82
–
at IF = 30A, TC = 125°C
0.73
–
Maximum instantaneous reverse currentTC = 25°C
0.2
1.0
at rated DC blocking voltage per leg (Note 4)TC = 125°C
IR
40
50
mA
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance from junction to case per leg
R
ΘJC
1.5
4.5
1.5
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR2535CT - MBR2560CT
TO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
MBRF2535CT - MBRF2560CT
ITO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB2535CT - MBRB2560CT
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF2535CT45-E3 | 15 A, 35 V, SILICON, RECTIFIER DIODE |
| MBRF2560CT45-E3 | 15 A, 60 V, SILICON, RECTIFIER DIODE |
| MBRB2550CT81 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2545CT81 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2535CT45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2560CT-E3 | 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220AB Tube |
| MBR2560CT-E3/45 | 功能描述:肖特基二极管与整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2560CTHE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR2590CT | 功能描述:肖特基二极管与整流器 30 Amp 90 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR25H35CT/45 | 功能描述:肖特基二极管与整流器 35 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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