参数资料
型号: MBR2560CT
元件分类: 参考电压二极管
英文描述: 25 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC PACKAGE-3
文件页数: 1/3页
文件大小: 833K
代理商: MBR2560CT
Voltage
45 to 150 V
Current
25.0 A
Jul - 09
MBR2545CT ....... MBR25150CT
25.0 Amp. Schottky Barrier Rectifier
Common Cathode
Suffix "C"
TO-220AB
1
3
2
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Low power loss, high efficiency.
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-750, Method 2026
Mounting position: Any
Weight: 2.24 grams
Mechanical Data
High temperature soldering guaranteed:
260°C/10 seconds, 6.35mm from case
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
High current capability, low forward voltage drop
Polarity: As marked
Mounting torque: 5 in. - lbs. max
Metal silicon junction, majority carrier conduction
Guardring for overvoltage protection
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC blocking voltage (V)
Maximum Average Forward Rectified Current
at TC = 130 °C
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
– 65 to + 175 °C
IFSM
25 A
200 A
– 65 to + 150 °C
IRRM
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
MBR
2545CT
45
31
MBR
2560CT
60
42
MBR
25100CT
100
70
MBR
25150CT
150
105
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
0.5 A
1.0 A
VF
IR
Rthj-c
Maximum Thermal Resistance Per Leg (Note 3)
-
1.0 °C/W
Maximum Instantaneous Forward Voltage at
(Note 2)
IF = 12.5 A, Tc = 25 °C
IF = 12.5 A, Tc = 125 °C
IF = 25 A, Tc = 25 °C
IF = 25 A, Tc = 125 °C
10 mA
-
0.82 V
0.73 V
0.85 V
0.75 V
0.92 V
0.88 V
0.95 V
0.92 V
1.02 V
0.98 V
0.75 V
0.65 V
0.82 V
0.78 V
Max. Instantaneous Reverse Current
@ TC=25°C
at Rated DC Blocking Voltage Per Leg @ TC=125°C
(Note 2)
15 mA
0.1 mA
7.5 mA
0.2 mA
MBR
2545CT
MBR
2560CT
MBR
25100CT
MBR
25150CT
Cj
Typical Junction Capacitance
460 pF
600 pF
0.2 mA
0.1 mA
5 mA
Notes:
1. 2.0s Pulse Width, f=1.0 KHz
2. Pulse Test: 300s Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (101.6 mm x 152.4 mm x 6.35 mm) Al-Plate.
相关PDF资料
PDF描述
MBR300100CT 150 A, 100 V, SILICON, RECTIFIER DIODE
MBR3045CTW 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3045PT 15 A, 45 V, SILICON, RECTIFIER DIODE
MBR4045WT 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AC
MBR4080WT 25 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AD
相关代理商/技术参数
参数描述
MBR2560CT/45 功能描述:肖特基二极管与整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR2560CT_Q 功能描述:肖特基二极管与整流器 27 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR2560CT-E3 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220AB Tube
MBR2560CT-E3/45 功能描述:肖特基二极管与整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR2560CTHE3/45 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel