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| 型号： | MBR30100CT-1 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | PLASTIC, TO-262, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 83K |
| 代理商： | MBR30100CT-1 |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR30100CT
MBRB30100CT
MBR30100CT-1
Data Sheet 2928, Rev. C
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
100
V
Max. Average Forward
IF(AV)
50% duty cycle @TC = 133°C,
rectangular wave form
30
A
Peak Repetitive Forward
Current(per leg)
IFRM
Rated VR square wave,
20KHz TC = 133°C
20
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
Surge applied at rated load
conditions halfwave, single
phase,60Hz
150
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 15 A, Pulse, TJ = 25
°C
@ 30 A, Pulse, TJ = 25 °C
0.85
1.05
V
VF2
@ 15 A, Pulse, TJ = 125 °C
@ 30 A, Pulse, TJ = 125
°C
0.70
0.85
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25 °C
1.00
mA
IR2
@VR = rated VR
TJ = 125
°C
6.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
400
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA
DC operation
50
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相关PDF资料 |
PDF描述 |
|---|---|
| MBR4080CT-1-G | 20 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR4090CT-G | 20 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB1060CT | 10 A, SILICON, RECTIFIER DIODE |
| MBRB1560CT | 15 A, SILICON, RECTIFIER DIODE |
| MBRB2560CT-G | 30 A, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR30100CT-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR30100CTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 100V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 100V TO220AB |
| MBR30100CTF-E1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR30100CTF-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR30100CT-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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