参数资料
型号: MBR30100PT-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
文件页数: 1/1页
文件大小: 27K
代理商: MBR30100PT-E3
Rev. Voltage 90 to 100 V
Forward Current 30A
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MBR3090PT
MBR30100PT
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (SEE FIG. 1)
IF(AV)
30
A
Peak repetitive forward current per leg at TC=105°C
(rated VR, square wave, 20 KHZ)
IFRM
30
A
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
TBD
A
(JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
IRRM
0.5
A
Thermal resistance from junction to case per leg
RΘJC
1.4
°C/W
Voltage rate of change at (rated VR)
dv/dt
10,000
V/s
Maximum operating junction temperature
TJ
150
°C
Storage temperature range
TSTG
– 65 to +175
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MBR3090PT
MBR30100PT
Unit
Maximum instantaneous
IF = 15A, TC = 25°C
0.85
forward voltage per leg at: (NOTE 2)
IF = 15A, TC = 125°C
VF
0.75
V
Maximum instantaneous reverse current at
TC = 25°C
IR
1.0
mA
rated DC blocking voltage per leg (NOTE 2)
TC = 125°C60
Notes: (1) 2.0s pulse width, f = 1.0 KHZ
(2) Pulse test: 300s pulse width, 1% duty cycle
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Dual rectifier construction, positive center-tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mechanical Data
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs max.
Weight: 0.2oz., 5.6g
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10 TYP.
BOTH SIDES
30
10
°
1 REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH
SIDES
PIN 2
TO-247AD
Dimensions
in inches and
(millimeters)
MBR3090PT thru MBR30100PT
Vishay Semiconductor
Document Number 88790
www.vishay.com
11-Dec-01
1
New Product
High Voltage Dual Schottky Rectifier
相关PDF资料
PDF描述
MBR3090PT 30 A, 90 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR30200CT 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040CT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040PT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR3045WT 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AC
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