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参数资料
| 型号： | MBR30100ST |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | MBR30100ST |
PAGE . 1
August 31,2010-REV.02
MBR3020ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
20 to 100 Volts
30 Amperes
Note :
Both Bonding and Chip structure are available.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvoltage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: TO-247S/TO3PS molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.1932 ounces, 5.4803 grams.
PA RA ME TE R
S YMB OL MBR3020ST MBR3030ST MBR3040ST MBR3045ST MBR3050ST MBR3060ST MBR3080ST MBR3090ST MBR30100ST UNITS
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
V
RRM
20
30
4 0
4 5
50
60
8 0
9 0
100
V
Ma xi mum RMS Vo lta g e
V
RMS
14
21
28
31 .5
3 5
4 2
56
63
7 0
V
Ma xi mum D C B lo cki ng Vo lta g e
V
DC
20
30
4 0
4 5
50
60
8 0
9 0
100
V
Ma xi mum A verag e F o rwa rd C urre nt
I
F(AV )
30
A
P e ak F o rward S urg e C urrent :8 .3 ms si ng le
ha lf s i ne -wave supe ri mp o sed o n ra te d lo a d
(J ED EC me tho d )
I
FS M
27 5
A
Ma xi mum F o rward Vo ltag e at 15 A pe r le g
V
F
0.7 0
0 .75
0.8
V
Ma xi mum D C Re ve rse C urre nt a t
Ra te d D C B locki ng Vo ltag e
T
J =2 5
OC
T
J =1 2 5
OC
I
R
0.1
20
0.05
20
mA
Typ i ca l The rma l Re s i sta nce
R
JC
1.4
OC /
W
Op era ti ng Juncti on and S to rag e Te mp e rature
Ra ng e
TJ,TSTG
-5 5 to + 15 0
-6 5 to + 17 5
OC
0
.5
1
6
(1
3
.2
0
)
0
.5
0
4
(1
2
.8
0
)
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0.
7
32(
18
.5
8
)
0.
7
15(
18
.1
8
)
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
0.118(3.0)
MIN.
0.599(15.20)
0.582(14.80)
0.
57
7(
14.
6
5
)
0.
56
5(
14.
3
5
)
0.
16
6(
4.
20
)
0.
14
9(
3.
80
)
0.
77
6(
19
.7
0)
0.
75
9(
19
.3
0)
0.
5
79(
14
.70)
0.
5
63(
14
.30)
0.185(4.70)
0.169(4.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR30100W | 制造商:PFS 制造商全称:Shenzhen Ping Sheng Electronics Co., Ltd. 功能描述:30 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBR30100WT | 功能描述:DIODE ARRAY SCHOTTKY 100V TO247 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:850mV @ 15A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:通孔 封装/外壳:TO-247-3 供应商器件封装:TO-247AD 标准包装:30 |
| MBR30120CT | 功能描述:DIODE ARRAY SCHOTTKY 120V TO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:120V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:900mV @ 15A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 120V 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220AB 标准包装:50 |
| MBR30150 | 制造商:ASEMI 制造商全称:ASEMI 功能描述:MBR30150Dual High-Voltage Schottky Rectifiers |
| MBR30150CT | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0 AMPS. Schottky Barrier Rectifiers |
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