参数资料
型号: MBR3030PTL
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 参考电压二极管
英文描述: 30 A, 30 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, TO-3P, 3 PIN
文件页数: 1/3页
文件大小: 81K
代理商: MBR3030PTL
MBR3030PTL thru 3060PTL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR
3030PTL
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=110 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
30
200
-
0.57
0.80
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
5
C/W
TJ =25 C
CJ
Typical Junction Capacitance per
element (Note 3)
600
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =15A @
IF =30A @
MBR
3035PTL
35
24.5
35
MBR
3040PTL
40
28
40
MBR
3045PTL
45
31.5
45
MBR
3050PTL
50
35
50
MBR
3060PTL
60
42
60
V
0.85
0.75
1.05
0.90
TJ =125 C
1
60
5
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ =25 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 4, Oct -2010, KTHD23
相关PDF资料
PDF描述
MQ1EZ110D1E3 110 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
MQ1EZ140DTR 140 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
MQ1EZ150D5E3 150 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
MQ1EZ160D2E3 160 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
MQ1GZ150D2E3TR 150 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
相关代理商/技术参数
参数描述
MBR3030PTT/P 制造商:PanJit Touch Screens 功能描述:
MBR3030ST 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS
MBR3030W 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3030WT 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 60 Volts
MBR3035 制造商:PFS 制造商全称:Shenzhen Ping Sheng Electronics Co., Ltd. 功能描述:Schottky Barrier Rectifier