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| 型号： | MBR3035-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 381K |
| 代理商： | MBR3035-E3/4W |
Vishay General Semiconductor
M3035S & M3045S
Document Number 88952
20-Jan-06
www.vishay.com
1
TO-220AB
1
2
3
1
2
CASE
3
Schottky Barrier Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V
IFSM
200 A
VF at IF = 30 A
0.61 V
TJ max.
150 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M3035S
M3045S
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
30
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current per leg at tp = 2 s, 1 kHz
IRRM
2.0
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
at IF = 15 A
at IF = 30 A
TJ = 25 °C
VF
0.54
0.65
-
0.70
V
at IF = 15 A
at IF = 30 A
TJ = 125 °C
0.46
0.61
-
0.66
Maximum instantaneous
reverse current at rated VR
(1)
TJ = 25 °C
TJ = 125 °C
IR
40
26
200
55
A
mA
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
980
pF
相关PDF资料 |
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| MBR3035CT-1-G | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR3045CT-1-G | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR3035CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3045CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3035PT | 功能描述:肖特基二极管与整流器 30 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3035PT/45 | 功能描述:肖特基二极管与整流器 30 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3035PT_1 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0 AMPS. Schottky Barrier Rectifiers |
| MBR3035PT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0AMPS. Schottky Barrier Rectifiers |
| MBR3035PT_Q | 功能描述:肖特基二极管与整流器 30 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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