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参数资料
| 型号： | MBR3040PTL |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 30 A, 40 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 74K |
| 代理商： | MBR3040PTL |
MBR3030PTL thru 3060PTL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR
3030PTL
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=110 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
30
200
-
0.57
0.80
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
5
C/W
TJ =25 C
CJ
Typical Junction Capacitance per
element (Note 3)
600
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =15A @
IF =30A @
MBR
3035PTL
35
24.5
35
MBR
3040PTL
40
28
40
MBR
3045PTL
45
31.5
45
MBR
3050PTL
50
35
50
MBR
3060PTL
60
42
60
V
0.85
0.75
1.05
0.90
TJ =125 C
1
60
5
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ =25 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 3, Aug -2007, KTHD23
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相关代理商/技术参数 |
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| MBR3040ST | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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| MBR3040WT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 60 Volts |
| MBR3045 | 制造商:GSG 制造商全称:GSG 功能描述:Chips for Schottky Diodes |
| MBR3045/3P | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
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