- 您现在的位置：买卖IC网 > PDF目录133505 > MBR3045CTHE3/45 (VISHAY SEMICONDUCTORS) 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB PDF资料下载
参数资料
| 型号： | MBR3045CTHE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 486K |
| 代理商： | MBR3045CTHE3/45 |
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88677
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 20 A
IF = 30 A
TC = 125°C
TC = 25 °C
TC = 125 °C
VF
0.60
0.76
0.72
V
Maximum instantaneous reverse current per diode at
rated DC blocking voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
1.0
60
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR3045CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF3045CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB3045CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB3045CT-E3/81
1.35
81
800/reel
Tape reel
TO-220AB
MBR3045CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF3045CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB3045CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB3045CTHE3/81 (1)
1.35
81
800/reel
Tape reel
Figure 1. Forward Current Derating Curve
0
6
12
24
30
0
50
100
150
18
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
150
100
250
200
300
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MMSZ4680T1 | 2.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ5223 | 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MBRD660CTTRL | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| MR100UFG | 0.02 A, SILICON, SIGNAL DIODE |
| MXLCE110ATRE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3045CT-LJ | 制造商:Diodes Incorporated 功能描述:SCHOTTKY RECTIFIER TO220AB TUBE 50PCS - Rail/Tube 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 30A 45V TO-220AB |
| MBR3045CT-N3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBR3045CTP | 功能描述:肖特基二极管与整流器 SCHOTT RECT,30A,45V 45V,15A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045CTPBF | 功能描述:DIODE SCHOTTKY 45V 15A TO220AB RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| MBR3045CTPBF | 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
发布紧急采购，3分钟左右您将得到回复。