参数资料
型号: MBR3045CTPBF
厂商: Vishay Semiconductors
文件页数: 1/7页
文件大小: 161K
描述: DIODE SCHOTTKY 45V 15A TO220AB
产品目录绘图: TO-220AB Series Side
TO-220AB Series Circuit
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 760mV @ 30A
电流 - 在 Vr 时反向漏电: 1mA @ 45V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *MBR3045CTPBF
VS-MBR3045CTPBF
VS-MBR3045CTPBF-ND
VSMBR3045CTPBF
VSMBR3045CTPBF-ND
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
1
Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 15 A
FEATURES
? 150 °C TJ
operation
? Low forward voltage drop
? High frequency operation
? High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
? Guard ring for enhanced ruggedness and long
term reliability
? Compliant to RoHS Directive 2002/95/EC
? Designed and qualified according to JEDEC-JESD47
? Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV)
2 x 15 A
VR
45 V
VF
at I
F
See Electrical table
IRM
max. 100 mA at 125 °C
TJ
max. 150 °C
Diode variation Common cathode
EAS
10 mJ
Anode
13Common
2
Base
2
common
cathode
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS VALUES UNITS
IF(AV)
Rectangular waveform (per device)
30 A
VRRM
35/45 V
IFRM
TC
= 123 °C (per leg) 30
A
IFSM
tp
= 5 μs sine 1020
VF
20 Apk, TJ
= 125 °C 0.6 V
TJ
Range
- 65 to 150 °C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-MBR3045CTPbF VS-MBR3045CT-N3 UNITS
Maximum DC reverse voltage
VR
45 45 V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
IF(AV)
TC
= 123 °C, rated V
R
15
A
per device
30
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC
= 123 °C 30
Non-repetitive peak surge current
IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM
applied
1020
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
200
Non-repetitive avalanche energy per leg
EAS
TJ
= 25 °C, I
AS
= 2 A, L = 5 mH 10 mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ
maximum V
A
= 1.5 x V
R
typical
2A
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