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参数资料
| 型号： | MBR3045CTW |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 79K |
| 代理商： | MBR3045CTW |
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RATING AND CHARACTERISTIC CURVES
MBR3045CTW
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
50
100
150
200
250
300
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
10
0
50
40
175
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,(
m
A
)
20
40
120
140
0.001
0.1
1.0
100
10
60
80
100
TJ = 125 C
0.01
TJ = 25 C
8.3ms Single Half-Sine-Wave
30
0
20
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
PULSE WIDTH 300us
2% Duty cycle
TJ = 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
10000
1000
100
0.1
CASE TEMPERATURE , C
0
4
TJ = 25 C, f= 1MHz
TJ = 125 C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3045F | 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
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| MBR3045FCTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 45V, VF=0.70V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 45V ITO220AB |
| MBR3045PT | 功能描述:肖特基二极管与整流器 31 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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