- 您现在的位置：买卖IC网 > PDF目录95883 > MBR3045PT-E3 (VISHAY SEMICONDUCTORS) 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD PDF资料下载
参数资料
| 型号： | MBR3045PT-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 98K |
| 代理商： | MBR3045PT-E3 |
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 20 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
-
0.60
0.76
0.72
0.75
0.65
-
V
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 125 °C
IR
1.0
60
5.0
100
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Thermal resistance from junction to case per diode
RθJC
1.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR3045PT-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
0
6
12
24
30
0
50
100
150
18
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
150
100
250
200
300
1
100
10
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
相关PDF资料 |
PDF描述 |
|---|---|
| MBR3045PT | 30 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR3060PT | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3060WT-S | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR30L100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR340-G | 3 A, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3045PT-E3/45 | 功能描述:肖特基二极管与整流器 30 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045PTG | 功能描述:肖特基二极管与整流器 30A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045ST | 功能描述:肖特基二极管与整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045ST_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR3045STG | 功能描述:肖特基二极管与整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。