参数资料
型号: MBR3045PT
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 59K
描述: DIODE SCHOTTKY 45V 15A SOT93
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 30
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 20A
电流 - 在 Vr 时反向漏电: 1mA @ 45V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-218-3
供应商设备封装: SOT-93
包装: 管件
其它名称: MBR3045PTOS
?
Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 3
1
Publication Order Number:
MBR3045PT/D
MBR3045PT
Preferred Device
SWITCHMODE
Power Rectifier
These state?of?the?art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
?Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
?Guard?ring for Stress Protection
?Low Forward Voltage
?175°C Operating Junction Temperature
?Pb?Free Package is Available*
Mechanical Characteristics
?Case: Epoxy, Molded
?Weight: 4.3 Grams (Approximately)
?Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC
= 105
°C) Per Device
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz) Per Diode
IFRM
30
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Peak Repetitive Reverse Current (2.0 s,
1.0 kHz) Per Diode (See Figure 6)
IRRM
2.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction?to?Ambient: dP
D/dTJ
< 1/R
JA.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBR3045PT SOT?93
SOT?93
CASE 340D
PLASTIC
30 Units / Rail
2
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
1
3
2
4
3
MARKING
DIAGRAM
http://onsemi.com
AYWWG
MBR3045PT
MBR3045PTG SOT?93
(Pb?Free)
30 Units / Rail
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
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