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参数资料
| 型号： | MBR3045ST |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | MBR3045ST |
PAGE . 1
August 31,2010-REV.02
MBR3020ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
20 to 100 Volts
30 Amperes
Note :
Both Bonding and Chip structure are available.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvoltage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: TO-247S/TO3PS molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.1932 ounces, 5.4803 grams.
PA RA ME TE R
S YMB OL MBR3020ST MBR3030ST MBR3040ST MBR3045ST MBR3050ST MBR3060ST MBR3080ST MBR3090ST MBR30100ST UNITS
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
V
RRM
20
30
4 0
4 5
50
60
8 0
9 0
100
V
Ma xi mum RMS Vo lta g e
V
RMS
14
21
28
31 .5
3 5
4 2
56
63
7 0
V
Ma xi mum D C B lo cki ng Vo lta g e
V
DC
20
30
4 0
4 5
50
60
8 0
9 0
100
V
Ma xi mum A verag e F o rwa rd C urre nt
I
F(AV )
30
A
P e ak F o rward S urg e C urrent :8 .3 ms si ng le
ha lf s i ne -wave supe ri mp o sed o n ra te d lo a d
(J ED EC me tho d )
I
FS M
27 5
A
Ma xi mum F o rward Vo ltag e at 15 A pe r le g
V
F
0.7 0
0 .75
0.8
V
Ma xi mum D C Re ve rse C urre nt a t
Ra te d D C B locki ng Vo ltag e
T
J =2 5
OC
T
J =1 2 5
OC
I
R
0.1
20
0.05
20
mA
Typ i ca l The rma l Re s i sta nce
R
JC
1.4
OC /
W
Op era ti ng Juncti on and S to rag e Te mp e rature
Ra ng e
TJ,TSTG
-5 5 to + 15 0
-6 5 to + 17 5
OC
0
.5
1
6
(1
3
.2
0
)
0
.5
0
4
(1
2
.8
0
)
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0.
7
32(
18
.5
8
)
0.
7
15(
18
.1
8
)
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
0.118(3.0)
MIN.
0.599(15.20)
0.582(14.80)
0.
57
7(
14.
6
5
)
0.
56
5(
14.
3
5
)
0.
16
6(
4.
20
)
0.
14
9(
3.
80
)
0.
77
6(
19
.7
0)
0.
75
9(
19
.3
0)
0.
5
79(
14
.70)
0.
5
63(
14
.30)
0.185(4.70)
0.169(4.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
相关PDF资料 |
PDF描述 |
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| MBR30H100CT/45-E3 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H100CT/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR3045ST_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR3045STG | 功能描述:肖特基二极管与整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045W | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBR3045WT | 功能描述:肖特基二极管与整流器 30 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR3045WTG | 功能描述:肖特基二极管与整流器 30A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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