参数资料
型号: MBR3045WT
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AC
封装: PLASTIC PACKAGE-3
文件页数: 1/7页
文件大小: 137K
代理商: MBR3045WT
Document Number: 94293
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08
1
Schottky Rectifier, 2 x 15 A
MBR3035WTPbF/MBR3045WTPbF
Vishay High Power Products
FEATURES
150 °C TJ operation
Center tap TO-247 package
Very low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation
for
enhanced
mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for industrial level
DESCRIPTION
The MBR30..WTPbF center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 15 A
VR
35/45 V
IRM
100 mA at 125 °C
TO-247AC
Base
common
cathode
Common
cathode
2
1
3
Anode
1
Anode
2
Available
Pb-free
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform (per device)
30
A
IFRM
TC = 125 °C (per leg)
30
VRRM
35/45
V
IFSM
tp = 5 s sine
1020
A
VF
20 Apk, TJ = 125 °C
0.60
V
TJ
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBR3035WTPbF
MBR3045WTPbF
UNITS
Maximum DC reverse voltage
VR
35
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
per leg
IF(AV)
TC = 125 °C, rated VR
15
A
per device
30
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz TC = 125 °C
30
Non-repetitive peak surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
1020
Surge applied at rated load conditions half wave,
single phase, 60 Hz
200
Peak repetitive reverse surge current
IRRM
2.0 s 1.0 kHz
2.0
* Pb containing terminations are not RoHS compliant, exemptions may apply
相关PDF资料
PDF描述
MBR3045WT 15 A, 45 V, SILICON, RECTIFIER DIODE
MBR3040WT 15 A, 40 V, SILICON, RECTIFIER DIODE
MBR3045 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR3080CT-BP 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-3
MBR3030C 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-3
相关代理商/技术参数
参数描述
MBR3045WTG 功能描述:肖特基二极管与整流器 30A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR3045WT-N3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A
MBR3045WTPBF 功能描述:DIODE SCHOTTKY 45V 15A TO247AC RoHS:是 类别:分离式半导体产品 >> 二极管,整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)(最大):2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)(每个二极管):5A 电压 - (Vr)(最大):600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA(Io) 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2
MBR3050 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30 Ampere Schottky Barrier Rectifiers
MBR3050/3P 制造商:ASEMI 制造商全称:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers