参数资料
型号: MBR3045WTG
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 136K
描述: DIODE SCHOTTKY 45V 15A TO-247
标准包装: 30
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 760mV @ 30A
电流 - 在 Vr 时反向漏电: 1mA @ 45V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
其它名称: MBR3045WTG-ND
MBR3045WTGOS
?
Semiconductor Components Industries, LLC, 2010
March, 2010 ?
Rev. 4
1
Publication Order Number:
MBR3045WT/D
MBR3045WT
SWITCHMODE
Power Rectifier
These state?of?the?art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
?
Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
?
Guardring for Stress Protection
?
Low Forward Voltage
?
175°C Operating Junction Temperature
?
Popular TO?247 Package
?
Pb?Free Package is Available*
Mechanical Characteristics
?
Case: Epoxy, Molded
?
Weight: 4.3 Grams (Approximately)
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC
= 105
°C) Per Device
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz)
Per Diode
IFRM
30
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Peak Repetitive Reverse Current (2.0 s,
1.0 kHz) Per Diode (See Figure 6)
IRRM
2.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO?247
CASE 340L
PLASTIC
2
3
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
1
3
2
4
Device Package Shipping
ORDERING INFORMATION
MBR3045WT TO?247 30 Units/Rail
MBR3045WTG TO?247
(Pb?Free)
30 Units/Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
MARKING DIAGRAM
MBR3045WT
AYWWG
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