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参数资料
| 型号： | MBR30H100PT-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 321K |
| 代理商： | MBR30H100PT-E3 |
MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88678
Revision: 25-Mar-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H90PT
MBR30H100PT
UNIT
Maximum instantaneous forward
voltage per diode (1)
IF = 15 A
IF = 30 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.82
0.67
0.93
0.80
V
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode (1)
TJ = 25 °C
TJ = 125 °C
IR
5.0
6.0
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90PT
MBR30H100PT
UNIT
Thermal resistance from junction to case per diode
RθJC
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR30H100PT-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Derating Curve
0
5
10
15
20
25
30
35
75
50
25
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Typical Instantaneous Forward Characteristics Per Diode
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
10
0.1
0.01
1
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
相关PDF资料 |
PDF描述 |
|---|---|
| MBR30H150CT-E3 | 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H35CT/45-E3 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H45CT-E3 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H50CT-E3 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H60CT/45-E3 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR30H100PT-E3/45 | 功能描述:肖特基二极管与整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBR30H100PT-E3/450 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR30H10PT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR30H150C7G | 制造商:ON Semiconductor 功能描述: |
| MBR30H150CT | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:30 AMP SCHOTTKY RECTIFIERS |
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