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参数资料
型号： MBR30H35PT
厂商： VISHAY SEMICONDUCTORS
元件分类： 参考电压二极管
英文描述： 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD
封装： PLASTIC, TO-3P, 3 PIN
文件页数： 1/4页
文件大小： 99K
代理商： MBR30H35PT
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
Document Number: 88792
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V to 60 V
IFSM
200 A
VF
0.58 V, 0.63 V
IR
150 A
TJ max.
175 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 s pulse width, f = 1.0 kHz
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
30
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 s waveform)
ERSM
30
20
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change at rated VR
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
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相关代理商/技术参数
参数描述
MBR30H35PT-E3/45 功能描述:肖特基二极管与整流器 30 Amp 35 Volt Dual 200 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H45CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers
MBR30H45CT/45 功能描述:肖特基二极管与整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H45CT-E3/45 功能描述:肖特基二极管与整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H45CTHE3/45 功能描述:肖特基二极管与整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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